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PD - 91841C
IRLBA3803
HEXFET(R) Power MOSFET

Logic-Level Gate Drive Advanced Process Technology 175C Operating Temperature Fast Switching Fully Avalanche Rated Purchase IRLBA3803/P for solder plated option.
D
VDSS = 30V RDS(on) = 0.005
G
ID = 179AV
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The Super-220 is a package that has been designed to have the same mechanical outline and pinout as the industry standard TO-220 but can house a considerably larger silicon die. It has increased current handling capability over both the TO-220 and the much larger TO-247 package. This makes it ideal to reduce component count in multiparalled TO-220 applications, reduce system power dissipation, upgrade existing designs or have TO-247 performance in a TO-220 outline. This package has also been designed to meet automotive qualification standard Q101.
S
Super - 220
Absolute Maximum Ratings
Parameter
ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Q Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche EnergyRU Avalanche CurrentQU Repetitive Avalanche EnergyQ Peak Diode Recovery dv/dt SU Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Recommended clip force
Max.
179 V 126V 720 270 1.8 16 610 71 27 5.0 -55 to + 175 300 (1.6mm from case ) 20
Units
A W W/C V mJ A mJ V/ns C N
Thermal Resistance
Parameter
RJC RCS RJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient
Typ.
--- 0.5 ---
Max.
0.55 --- 58
Units
C/W
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1
05/20/02
IRLBA3803
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient V(BR)DSS RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. 30 --- --- --- 1.0 55 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- 0.052 --- --- --- --- --- --- --- --- --- --- --- 14 230 29 35 2.0 5.0 5000 1800 880 Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mAU 0.005 VGS = 10V, ID = 71AT 0.009 VGS = 4.5V, ID = 59A T V VDS = V GS, ID = 250A --- S VDS = 25V, ID = 71AU 25 VDS = 30V, VGS = 0V A 250 VDS = 24V, VGS = 0V, TJ = 150C 100 VGS = 16V nA -100 VGS = -16V 140 ID = 71A 41 nC VDS = 24V 78 VGS = 4.5V, See Fig. 6 and 13TU --- VDD = 15V --- ID = 71A --- RG = 1.3 --- RD = 0.20, See Fig. 10 TU D Between lead, --- nH 6mm (0.25in.) G from package --- S and center of die contact --- VGS = 0V --- pF VDS = 25V --- = 1.0MHz, See Fig. 5U
Source-Drain Ratings and Characteristics
IS
I SM
VSD trr Q rr ton Notes:
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)Q Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min. Typ. Max. Units
Conditions D MOSFET symbol --- --- 179V showing the A G integral reverse --- --- 720 p-n junction diode. S --- --- 1.3 V TJ = 25C, IS = 71A, VGS = 0VT --- 120 180 ns TJ = 25C, IF = 71A --- 450 680 nC di/dt = 100A/s TU Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Q Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 ) R VDD = 15V, starting TJ = 25C, L = 180H RG = 25, IAS = 71A. (See Figure 12)
T Pulse width 300s; duty cycle 2%. U Uses IRL3803 data and test conditions. V Calculated continuous current based on maximum allowable
junction temperature;for recommended current-handling of the package refer to Design Tip # 93-4
S ISD 71A, di/dt 130A/s, VDD V(BR)DSS,
TJ 175C
2
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IRLBA3803
1000
I D , Drain-to-Source Current (A)
100
I D , Drain-to-Source Current (A)
VGS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 2.7V TOP
1000
VGS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 2.7V TOP
100
2.7V
20s PULSE WIDTH T = 175 C
J 1 10 100
2.7V
10 0.1 1
20s PULSE WIDTH T = 25 C
J 10 100
10 0.1
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
2.0
I D , Drain-to-Source Current (A)
TJ = 25 C TJ = 175 C
R D S (on ) , D rain-to-S ource O n R esistance (N orm alized)
I D = 1 20 A
1.5
100
1.0
0.5
10 2.0
V DS = 25V 20s PULSE WIDTH 8.0 4.0 6.0 10.0
0.0 -60 -40 -20 0 20 40 60 80
V G S = 10 V
100 120 140 160 180
A
VGS , Gate-to-Source Voltage (V)
T J , Junction T em perature (C )
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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3
IRLBA3803
10000
8000
V G S , G ate-to-S ource V oltage (V )
V GS C iss C C iss C rs s o ss
= = = =
0V , f = 1MHz C g s + C g d , C d s S H O R TE D C gd C ds + C g d
15
I D = 71 A V D S = 24 V V D S = 15 V
12
C , Capacitance (pF)
6000
C oss
9
4000
6
C rss
2000
3
0 1 10 100
A
0 0 40 80
FO R TE S T C IRC UIT S E E FIG U R E 1 3
120 160
A
200
V D S , D rain-to-S ourc e V oltage (V )
Q G , T otal G ate C harge (nC )
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
1000
10000
ISD , Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED BY R
DS(on)
100
I D , Drain Current (A)
TJ = 175 C
1000
10us
TJ = 25 C
10
100us 1ms
100
1 0.4
V GS = 0 V
0.8 1.2 1.6 2.0 2.4
10
TC = 25 C TJ = 175 C Single Pulse
1 10
10ms
100
VSD ,Source-to-Drain Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
4
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IRLBA3803
200
LIMITED BY PACKAGE
160
V DS VGS RG
RD
D.U.T.
+
I D , Drain Current (A)
V DD -
120
4.5V
Pulse Width 1 s Duty Factor 0.1 %
80
Fig 10a. Switching Time Test Circuit
40
VDS 90%
0 25 50 75 100 125 150 175
TC , Case Temperature ( C)
Fig 9. Maximum Drain Current Vs. Case Temperature
10% VGS
td(on) tr t d(off) tf
Fig 10b. Switching Time Waveforms
1
Thermal Response (Z thJC )
D = 0.50 0.20 0.1 0.10 0.05 0.02 0.01
0.01
SINGLE PULSE (THERMAL RESPONSE)
0.001 0.00001
Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.1 0.0001 0.001 0.01
P DM t1 t2 1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRLBA3803
1500
E A S , S ingle P ulse A valanche E nergy (m J)
TO P
1200
1 5V
B O TTO M
ID 29 A 5 0A 71 A
VDS
L
D R IV E R
900
RG
20V tp
D .U .T
IA S
+ V - DD
A
600
0 .0 1
Fig 12a. Unclamped Inductive Test Circuit
300
0
V D D = 15 V
25 50 75 100 125 150
A
175
V (B R )D SS tp
S tarting T J , J unc tion T em perature (C )
IAS
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
50K
QG
12V
.2F .3F
4.5 V
VG
QGS
QGD
VGS
3mA
D.U.T.
+ V - DS
Charge
IG
ID
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
6
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IRLBA3803
Peak Diode Recovery dv/dt Test Circuit
D.U.T
+
S
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
R
-
T
+
Q
RG * * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test
+ V DD
Driver Gate Drive P.W. Period D=
P.W. Period VGS=10V
*
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
VDD
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
ISD
* VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFETS
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7
IRLBA3803
Super-220 Package Outline
Super-220 package is not recommended for Surface Mount Application.
Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.05/02
8
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